Browsing by Subject "Band-edge emissions"

Now showing items 1-6 of 6

    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, Andreas S. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, A. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Article  

      A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties 

      Othonos, A.; Zervos, Matthew; Christofides, C. (2010)
      GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...
    • Article  

      Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states 

      Othonos, Andreas S.; Lioudakis, Emmanouil E.; Tsokkou, Demetra; Philipose, U.; Ruda, H. E. (2009)
      In recent years, ZnSe nanowires have been widely investigated for their potential applications in optoelectronics. A typical room temperature photoluminescence spectrum of ZnSe nanowires grown by vapor-liquid-solid growth ...